| PART |
Description |
Maker |
| BSP030-04 BSP030 |
N-channel TrenchMOS intermediate level FET N沟道 TrenchMOS 中间级场效应
N-channel enhancement mode field-effect transistor
From old datasheet system
|
NXP Semiconductors N.V.
Philips
|
| PHX23NQ10T PHX23NQ10T_1 PHX23NQ10T127 |
13 A, 100 V, 0.07 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
From old datasheet system
N-channel TrenchMOS transistor
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PH3230S PH3230S115 |
N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PSMN057-200B PSMN057-200B_1 |
N-channel TrenchMOS(tm) transistor
N-channel TrenchMOS transistor
From old datasheet system
N-channel TrenchMOS TM transistor
|
PHILIPS[Philips Semiconductors]
NXP Semiconductors
|
| IRF630S IRF630 |
N-channel TrenchMOS TM transistor
N-channel TrenchMOS transistor(N沟道 TrenchMOS 晶体
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PHU108NQ03LT PHU108NQ03LT127 PHB108NQ03LT PHD108NQ |
N-channel TrenchMOS logic level FET
75 A, 25 V, 0.0075 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251 PLASTIC, IPAK-3
N-channel TrenchMOS logic level FET
|
NXP Semiconductors N.V.
|
| PSMN030-150B PSMN030-150B_1 |
From old datasheet system
N-channel TrenchMOS transistor
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PSMN030-150P PSMN030-150P_1 |
From old datasheet system
N-channel TrenchMOS transistor
N-channel TrenchMOS(tm) transistor
|
NXP Semiconductors
PHILIPS[Philips Semiconductors]
|
| PSMN010-55D |
N-channel logic level TrenchMOS(tm) transistor
N-channel logic level TrenchMOS TM transistor
N-channel logic level TrenchMOS transistor(N沟道逻辑电平 TrenchMOS晶体
|
Philips Semiconductors
NXP Semiconductors N.V.
|
| PHK24NQ04LT |
TrenchMOS logic level FET 21200 mA, 40 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012
From old datasheet system
TrenchMOS (tm) logic level FET
|
NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
|
| PHN210T |
Dual N-channel TrenchMOS intermediate level FET 3.4 A, 30 V, 0.1 ohm, 2 CHANNEL, N-CHANNEL, Si, POWER, MOSFET, MS-012AA
|
NXP Semiconductors N.V.
|
| 2N7002T |
N-channel TrenchMOS FET - Configuration: Single N-channel ; I<sub>D</sub> DC: 0.3 A; R<sub>DS(on)</sub>: 5000@10V5300@4.5V mOhm; V<sub>DS</sub>max: 60 V 300 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
|
NXP Semiconductors N.V.
|
